IRFP4127PbF Datasheet - International Rectifier

IRFP4127PbF Power MOSFET

Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits G D S IRFP4127PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 200V 17m 21m 75A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Ga.

IRFP4127PbF Features

* IRRM - (A) VGS(th) Gate threshold Voltage (V) IRRM - (A) 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 60 50 40 30 20 IF = 29A 10 VR = 100V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs)

IRFP4127PbF Datasheet (495.59 KB)