IRFP4229 - N-Channel MOSFET
IRFP4229 Features
* Static drain-source on-resistance: RDS(on)≤46mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Repetitive Peak Current Capability for Reliable Operation
* Short fall & Rise T
