* Advanced Process Technology
* Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
* Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
* Low QG for Fast Response
* Hig
IRFP4227PbF Datasheet (1.33 MB)
IRFP4227PbF
1.33 MB
Power mosfet.
IRFP4227PbF PDP SWITCH Key Parameters VDS max 200 V VDS (Avalanche) typ. 240 V RDS(ON) typ. @ 10V 21 mī IRP max @ TC= 100°C 130 A TJ ma.
đ Related Datasheet
IRFP4227PBF Power MOSFET (International Rectifier)
IRFP4227PBF N-Channel MOSFET (INCHANGE)
IRFP4227 N-Channel MOSFET (INCHANGE)
IRFP4228PBF Power MOSFET (International Rectifier)
IRFP4229 N-Channel MOSFET (INCHANGE)
IRFP4229PBF Power MOSFET (International Rectifier)
IRFP4232PBF Power MOSFET (International Rectifier)
IRFP4242PBF Power MOSFET (International Rectifier)
IRFP4004 N-Channel MOSFET (INCHANGE)
IRFP4004PbF Power MOSFET (International Rectifier)
Stock and price
 |
|
Microchip Technology Inc
|
| 1N6106AUS |
| 0 In Stock |
| Qty : 500 units |
|
Unit Price : $10.15
|
| đ Buy Now |
TAGS
Image Gallery
