IRFP4110 Datasheet - INCHANGE

IRFP4110, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 *

Features

* Static drain-source on-resistance: RDS(on)≤4.5mΩ
* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SMP

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IRFP4110-INCHANGE.pdf