* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VG
IRFP470
IXYS
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N-channel mosfet.
MegaMOSTMFET N-Channel Enhancement Mode IRFP 470 VDSS = 500 V ID (cont) = 24 A RDS(on) = 0.23 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 I.
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