* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VG
IRFP470
IXYS
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N-channel mosfet.
MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 470
VDSS = 500 V
ID (cont) = 24 A RDS(on) = 0.23 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 I.
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