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IRFP470 Datasheet - IXYS

IRFP470 N-Channel MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IRFP 470 VDSS = 500 V ID (cont) = 24 A RDS(on) = 0.23 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for.

IRFP470 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VG

IRFP470 Datasheet (46.09 KB)