IRFP470 Datasheet - IXYS

IRFP470, N-Channel MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IRFP 470 VDSS = 500 V ID (cont) = 24 A RDS(on) = 0.23 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 I

Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VG

Applications

* l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions.

IRFP470-IXYS.pdf