IRFP4710 Datasheet - International Rectifier

IRFP4710 ower MOSFET

PD - 94361 IRFP4710 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 0.014Ω ID 72A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt T.

IRFP4710 Features

* S = 45A, VGS = 10V.

* ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C .

* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Data and specifications subject to change without

IRFP4710 Datasheet (103.75 KB)