* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherw
IRFP450
IXYS
45.10 KB
Standard power mosfet.
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 450
VDSS = 500 V
ID(cont) = 14 A RDS(on) = 0.40 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGS.
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