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IRFP250 Power MOSFET

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Description

Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VG.

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Datasheet Specifications

Part number
IRFP250
Manufacturer
IXYS
File Size
46.06 KB
Datasheet
IRFP250-IXYS.pdf
Description
Power MOSFET

Features

* l International standard package JEDEC TO-247 AD l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min

Applications

* l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions.

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