* Fast switching times
* International standard packages
* Low R HDMOSTM process DS (on)
* Rugged polysilicon gate cell structure
* High commuting dv/dt rating Applications
* DC choppers
* Motor Controls
* Switch-mode and resonan
IRFP360
IXYS
45.07 KB
N-channel mosfet.
MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 360
VDSS = 400 V
ID25 = 23 A RDS(on) = 0.20 Ω
Preliminary data
Symbol
VDSS V
DGR
VGS VGSM
ID25 ID100 .
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