IRFP360 Datasheet - IXYS

IRFP360 - N-Channel MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt T J ≤ 150°C, R G = 2 Ω TC = 25°C Mounting torque Max lead temperature for soldering 1.6 mm (0.062 in.) fro.

IRFP360 Features

* Fast switching times

* International standard packages

* Low R HDMOSTM process DS (on)

* Rugged polysilicon gate cell structure

* High commuting dv/dt rating Applications

* DC choppers

* Motor Controls

* Switch-mode and resonan

IRFP360-IXYS.pdf