$GYDQFHG 3RZHU 026)(7 IRFR224 FEATURES ♦ Avala.
Fairchild Semiconductor
IRFR224B - 250V N-Channel MOSFET
IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .
Samsung
IRFR224A - Power MOSFET
)($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
Fairchild Semiconductor
IRFR224 - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRFR224 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
Vishay Siliconix
IRFR224 - Power MOSFET
www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
INCHANGE
IRFR224 - N-Channel MOSFET
iscN-Channel MOSFET Transistor IRFR224 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.
