| Part number | IRFR224 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 282.55 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFR224-INCHANGE.pdf |
|
|
iscN-Channel MOSFET Transistor IRFR224 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRFR224 | Power MOSFET | Fairchild Semiconductor |
 |
IRFR224 | Power MOSFET | International Rectifier |
 |
IRFR224 | Power MOSFET | Vishay Siliconix |
 |
IRFR224A | Power MOSFET | Samsung |
|
IRFR224B | 250V N-Channel MOSFET | Fairchild Semiconductor |
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