Datasheet4U Logo Datasheet4U.com

IRFR220 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤0.8Ω.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFR220

Datasheet Details

Part number IRFR220
Manufacturer INCHANGE
File Size 239.21 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFR220 Datasheet
Additional preview pages of the IRFR220 datasheet.

📁 Similar Datasheet

  • IRFR220 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFR220 - Power MOSFET (Vishay Siliconix)
  • IRFR220 - Power MOSFET (International Rectifier)
  • IRFR220A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRFR220B - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFR220B - 200V N-Channel MOSFET (ON Semiconductor)
  • IRFR220N - Power MOSFET (International Rectifier)
  • IRFR220NPBF - Power MOSFET (International Rectifier)
  • IRFR220PBF - HEXFEP Power MOSFET (International Rectifier)
  • IRFR224 - Power MOSFET (Fairchild Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.8 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃ 42 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 2.98 UNIT ℃/W IRFR220 isc website：www.iscsemi.
Published: |