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IRFR220 Datasheet

The IRFR220 is a N-Channel Power MOSFETs. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFR220
ManufacturerIntersil
Overview IRFR220, IRFU220 Data Sheet July 1999 File Number 2410.2 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advan.
* 4.6A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.
Part NumberIRFR220
DescriptionPower MOSFET
ManufacturerInternational Rectifier
Overview . .
Part NumberIRFR220
DescriptionPower MOSFET
ManufacturerVishay
Overview Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed fo.
* Dynamic dV/dt rating
* Repetitive avalanche rated
* Surface-mount (IRFR220, SiHFR220)
* Straight lead (IRFU220, SiHFU220)
* Available in tape and reel
* Fast switching Available
* Ease of paralleling
* Material categorization: for definitions of compliance please see www.vishay.com/doc?999.
Part NumberIRFR220
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·.
*Static drain-source on-resistance: RDS(on)≤0.8Ω
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast Switching
*High frequency DC-DC converters
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Vo.