IRFR220B - 200V N-Channel MOSFET

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ON Semiconductor

Part number	IRFR220B
Manufacturer	ON Semiconductor
File Size	536.65 KB
Description	200V N-Channel MOSFET
Datasheet	IRFR220B Datasheet
Additional preview pages of the IRFR220B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.

4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V.
Low gate charge ( typical 12 nC).
Low Crss ( typical 10 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain.

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Published: Jan 23, 2023 |