Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.
Features
- 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V.
- Low gate charge ( typical 12 nC).
- Low Crss ( typical 10 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
D
D
!
GS
D-PAK
IRFR Series
GDS
I-PAK
IRFU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain.
IRFR220B Datasheet
