IRFR3710Z Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanche

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IRFR3710ZPbF Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche A

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PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Oper

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PD - 94740 AUTOMOTIVE MOSFET IRFR3710Z IRFU3710Z HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175

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AUTOMOTIVE GRADE   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avala

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IRFR3710ZPbF Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche A

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PD - 95513A AUTOMOTIVE MOSFET IRFR3710ZPbF IRFU3710ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resis

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