Philips Semiconductors Product specification N-c.
International Rectifier
IRFZ48N - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
NXP
IRFZ48N - N-Channel MOSFET
Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standa.
International Rectifier
IRFZ48NSPBF - HEXFET Power MOSFET
l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast .
International Rectifier
IRFZ48NS - Power MOSFET
PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switchin.
INCHANGE
IRFZ48NS - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
International Rectifier
IRFZ48NL - Power MOSFET
PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switchin.
International Rectifier
AUIRFZ48N - HEXFET Power MOSFET
AUTOMOTIVE GRADE PD - 97732 AUIRFZ48N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperatur.
International Rectifier
IRFZ48NPBF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
International Rectifier
IRFZ48NLPBF - HEXFET Power MOSFET
l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast .