
IRG7PH28UD1MPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1PbF IRG7PH28UD1MPbF
C VCES = 1200V IC = 15A, TC = 100°C
G E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION
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