IRG7PH28UD1PBF Datasheet | Specifications & PDF Download

  IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION

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