IRG7PH37K10D-EPBF Datasheet | Specifications & PDF Download

  IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs,

(24 views)