IRG7PH37K10D-EPBF Datasheet - International Rectifier

IRG7PH37K10D-EPBF, INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs,.

Features

* Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =

Applications

* Industrial Motor Drive

IRG7PH37K10D-EPBF-InternationalRectifier.pdf