International Rectifier
IRG7PK35UD1-EPbF - Insulated Gate Bipolar Transistor
IRG7PK35UD1PbF IRG7PK35UD1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150
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