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IRG7PK35UD1-EPbF Datasheet, Features, Application

IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor

  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate.

International Rectifier
rating-1 2

IRG7PK35UD1-EPbF - Insulated Gate Bipolar Transistor

   IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150.
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