Datasheet Details
| Part number | IRG7PK35UD1-EPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 507.70 KB |
| Description | Insulated Gate Bipolar Transistor |
| Datasheet | IRG7PK35UD1-EPbF IRG7PK35UD1PbF Datasheet (PDF) |
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Overview: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRG7PK35UD1-EPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 507.70 KB |
| Description | Insulated Gate Bipolar Transistor |
| Datasheet | IRG7PK35UD1-EPbF IRG7PK35UD1PbF Datasheet (PDF) |
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| Part Number | Description |
|---|---|
| IRG7PK35UD1PbF | Insulated Gate Bipolar Transistor |
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