* Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant Benefits High efficiency in a wide range of soft switching applications and switching frequencies Excellent current sharing in paral
IRG7PK35UD1-EPbF Datasheet (507.70 KB)
IRG7PK35UD1-EPbF
International Rectifier
507.70 KB
Insulated gate bipolar transistor.
IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150.
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