IRG7PK35UD1PbF Description
IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G C C C G E C E G C E Applications Induction heating Microwave ovens Soft switching applications n-channel IRG7PK35UD1PbF TO‐247AC G Gate IRG7PK35UD1‐EPbF TO‐247AD E Emitter C Collector.