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IRG7PK35UD1-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRG7PK35UD1-EPbF, a member of the IRG7PK35UD1PbF Insulated Gate Bipolar Transistor family.

Features

  • Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant Benefits High efficiency in a wide range of soft switching.

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Full PDF Text Transcription

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  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.
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