IRG7PK35UD1-EPbF datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRG7PK35UD1-EPbF |
|---|---|
| Datasheet | IRG7PK35UD1-EPbF IRG7PK35UD1PbF Datasheet (PDF) |
| File Size | 507.70 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Insulated Gate Bipolar Transistor |
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IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G C C C G E C E G C E Applications Induction heating Microwave ovens Soft switching applications n-channel IRG7PK35UD1PbF TO‐247AC G Gate IRG7PK35UD1‐EPbF TO‐247AD E Emitter C Collector.
View all International Rectifier (now Infineon) datasheets
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|---|---|
| IRG7PK35UD1PbF | Insulated Gate Bipolar Transistor |
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| IRG7PH28UD1PBF | INSULATED GATE BIPOLAR TRANSISTOR |
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| IRG7PH30K10PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
