
IRG8P15N120KDPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRG8P15N120KDPbF IRG8P15N120KD-EPbF
VCES = 1200V IC = 15A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tS
(7 views)
IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 120.
IRG8P15N120KDPbF Distributor