* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC E GC IRG8P15N120KDPbF IRG8P15N120KD‐EPbF TO‐247AC TO‐247AD G Gate C Collector E Emitter Benefits High Efficiency in a Mo
IRG8P15N120KDPbF Datasheet (611.55 KB)
IRG8P15N120KDPbF
International Rectifier
611.55 KB
Insulated gate bipolar transistor.
IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tS.
📁 Related Datasheet
IRG8P15N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P08N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P08N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P25N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P25N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P40N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P50N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P50N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG8P60N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
