IRG8P15N120KDPbF Datasheet - International Rectifier

IRG8P15N120KDPbF, INSULATED GATE BIPOLAR TRANSISTOR

IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tS.

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IRG8P15N120KDPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRG8P15N120KDPbF

Manufacturer:

International Rectifier

File Size:

611.55 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC E GC IRG8P15N120KDPbF IRG8P15N120KD‐EPbF TO‐247AC TO‐247AD G Gate C Collector E Emitter Benefits High Efficiency in a Mo

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRG8P15N120KDPbF Distributors

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IRG8P15N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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