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IRG8P25N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

IRG8P25N120KDPbF Description

  IRG8P25N120KDPbF IRG8P25N120KD-EPbF VCES = 1200V IC = 25A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   .

IRG8P25N120KDPbF Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG8P25N120KDPbF-like datasheet