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IRG8P40N120KD-EPbF, IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

IRG8P40N120KD-EPbF Description

  VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC.

IRG8P40N120KD-EPbF Features

* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC GCE IRG8P40N120KDPbF  IRG8P40N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Benefits  High Efficiency in a Mot

IRG8P40N120KD-EPbF Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRG8P40N120KD-EPbF, IRG8P40N120KDPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRG8P40N120KD-EPbF, IRG8P40N120KDPbF
Manufacturer
International Rectifier
File Size
530.47 KB
Datasheet
IRG8P40N120KDPbF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG8P40N120KD-EPbF, IRG8P40N120KDPbF.
Please refer to the document for exact specifications by model.

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International Rectifier IRG8P40N120KD-EPbF-like datasheet