* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC GCE IRG8P40N120KDPbF IRG8P40N120KD‐EPbF TO‐247AC TO‐247AD G Gate C Collector E Emitter Benefits High Efficiency in a Mot
IRG8P40N120KDPbF Datasheet (530.47 KB)
IRG8P40N120KDPbF
International Rectifier
530.47 KB
Insulated gate bipolar transistor.
VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC.
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