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IRG8P15N120KD-EPbF, IRG8P15N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

  IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tS.

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This datasheet PDF includes multiple part numbers: IRG8P15N120KD-EPbF, IRG8P15N120KDPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRG8P15N120KD-EPbF, IRG8P15N120KDPbF
Manufacturer
International Rectifier
File Size
611.55 KB
Datasheet
IRG8P15N120KDPbF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG8P15N120KD-EPbF, IRG8P15N120KDPbF.
Please refer to the document for exact specifications by model.

Features

* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC E GC IRG8P15N120KDPbF  IRG8P15N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Benefits  High Efficiency in a Mo

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRG8P15N120KD-EPbF Distributors

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