International Rectifier
IRG8P25N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRG8P25N120KDPbF IRG8P25N120KD-EPbF
VCES = 1200V IC = 25A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
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