IRG8P40N120KDPbF Datasheet | Specifications & PDF Download

IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

VCES = 1200V IC = 40A, TC =100°C IRG8P40N120K.

VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC

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