IRGB4607DPbF Datasheet | Specifications & PDF Download

IRGB4607DPbF Insulated Gate Bipolar Transistor

VCES = 600V IC = 7.0A, TC =100°C tSC 5µ.

VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate

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