
IRGB4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs
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