
IRGB4630DPbF - Insulated Gate Bipolar Transistor
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 30A, TC =100°C
C C
(10 views)
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insula.
IRGB4630DPbF Distributor