
IRGP4063D1-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(
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