IRGP4262D-EPBF (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR
IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max)
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