IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar.
International Rectifier
IRGP4262D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .