IRGP4263D-EPbF Datasheet | Specifications & PDF Download

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IRGP4263D-EPbF Insulated Gate Bipolar Transistor

  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF .

International Rectifier

IRGP4263D-EPbF - Insulated Gate Bipolar Transistor

   VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.
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