
IRGP4263DPbF - Insulated Gate Bipolar Transistor
VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5
(7 views)
VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF .
IRGP4263DPbF Distributor