IRGP4263DPbF Datasheet | Specifications & PDF Download
IRGP4263DPbF Insulated Gate Bipolar Transistor
VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF .
International Rectifier
IRGP4263DPbF - Insulated Gate Bipolar Transistor
VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5.
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