IRGP4266D-EPbF Datasheet | Specifications & PDF Download
IRGP4266D-EPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 9.
International Rectifier
IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5.
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