International Rectifier
IRGP4750D-EPbF - Insulated Gate Bipolar Transistor
IRGP4750DPbF IRGP4750D-EPbF
VCES = 650V
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications Industrial
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