IRGP4750D-EPbF Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC
IRGP4750DPbF-InternationalRectifier.pdf
Datasheet Details
IRGP4750D-EPbF, IRGP4750DPbF
International Rectifier
652.44 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4750D-EPbF, IRGP4750DPbF.
Please refer to the document for exact specifications by model.
IRGP4750D-EPbF Distributor
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