Datasheet4U Logo Datasheet4U.com

IRGP4750D-EPbF, IRGP4750DPbF Datasheet - International Rectifier

IRGP4750D-EPbF Insulated Gate Bipolar Transistor

IRGP4750D-EPbF Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC 

IRGP4750DPbF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRGP4750D-EPbF, IRGP4750DPbF. Please refer to the document for exact specifications by model.
IRGP4750D-EPbF Datasheet Preview Page 2 IRGP4750D-EPbF Datasheet Preview Page 3

Datasheet Details

Part number:

IRGP4750D-EPbF, IRGP4750DPbF

Manufacturer:

International Rectifier

File Size:

652.44 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGP4750D-EPbF, IRGP4750DPbF.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRGP4750DPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4740D-EPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4740DPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4760-EPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4760D-EPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4760DPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4760PbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGP4790-EPbF Insulated Gate Bipolar Transistor (International Rectifier)

TAGS

IRGP4750D-EPbF IRGP4750DPbF Insulated Gate Bipolar Transistor International Rectifier

IRGP4750D-EPbF Distributor