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IRGP4750DPbF Datasheet - International Rectifier

IRGP4750DPbF, Insulated Gate Bipolar Transistor

  IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 35A Applications * Industr.
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IRGP4750DPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGP4750DPbF

Manufacturer:

International Rectifier

File Size:

652.44 KB

Description:

Insulated Gate Bipolar Transistor

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC 

Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

IRGP4750DPbF Distributors

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