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IRGP4750DPbF Datasheet - International Rectifier

IRGP4750DPbF - Insulated Gate Bipolar Transistor

IRGP4750DPbF Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC 

IRGP4750DPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGP4750DPbF

Manufacturer:

International Rectifier

File Size:

652.44 KB

Description:

Insulated gate bipolar transistor.

IRGP4750DPbF Distributor

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