* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC
IRGP4750DPbF Datasheet (652.44 KB)
IRGP4750DPbF
International Rectifier
652.44 KB
Insulated gate bipolar transistor.
IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications Industr.
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