IRGP4740DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGP4740DPbF IRGP4740D-EPbF
VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C
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Insulated Gate Bipolar Transistor with Ultrafast Soft Reco.
IRGP4750D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGP4750DPbF IRGP4750D-EPbF
VCES = 650V
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications Industrial .
IRGP4750DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGP4750DPbF IRGP4750D-EPbF
VCES = 650V
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications Industrial .
IRGP4760-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Industrial Motor Drive • UPS • Solar Inve.
IRGP4760D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Industrial Motor Drive • UPS • Solar Inve.
IRGP4760DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Industrial Motor Drive • UPS • Solar Inve.