IRGP4740DPbF Datasheet - International Rectifier

IRGP4740DPbF, Insulated Gate Bipolar Transistor

IRGP4740DPbF IRGP4740D-EPbF VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C G Insulated Gate Bipolar Transistor with Ultrafast Soft Reco.

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IRGP4740DPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGP4740DPbF

Manufacturer:

International Rectifier

File Size:

814.43 KB

Description:

Insulated Gate Bipolar Transistor

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRGP4740DPbF Distributors

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IRGP4740DPbF Insulated Gate Bipolar Transistor International Rectifier

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