IRGP6630D-EPbF Datasheet | Specifications & PDF Download

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IRGP6630D-EPbF Insulated Gate Bipolar Transistor

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF .

International Rectifier

IRGP6630D-EPbF - Insulated Gate Bipolar Transistor

   VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .
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