IRGP6630D-EPbF Datasheet, Features, Application
IRGP6630D-EPbF Insulated Gate Bipolar Transistor
VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF .
International Rectifier
9
IRGP6630D-EPbF - Insulated Gate Bipolar Transistor
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