
IRGP6630D-EPbF - Insulated Gate Bipolar Transistor
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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tSC
(5 views)
VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF .
IRGP6630D-EPbF Distributor