IRGP6630D-EPbF Features
* Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding
IRGP6630DPbF-InternationalRectifier.pdf
Datasheet Details
IRGP6630D-EPbF, IRGP6630DPbF
International Rectifier
673.85 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP6630D-EPbF, IRGP6630DPbF.
Please refer to the document for exact specifications by model.
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IRGP6630D-EPbF Distributor
