Datasheet Details
- Part number
- IRGP20B120UD-E
- Manufacturer
- IRF
- File Size
- 148.42 KB
- Datasheet
- IRGP20B120UD-E_IRF.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120UD-E Description
PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
IRGP20B120UD-E Features
* UltraFast Non Punch Through (NPT) Technology
* Low Diode VF (1.67V Typical @ 20A & 25°C)
* 10 µs Short Circuit Capability
* Square RBSOA
* UltraSoft Diode Recovery Characteristics
* Positive VCE(on) Temperature Coefficient
* Extended Lead TO-
IRGP20B120UD-E Applications
* Rugged with UltraFast Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Sharing in Parallel Operation
* Longer Leads for Easier Mounting
TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM I
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