IRGP30B120KD-E

INSULATED GATE BIPOLAR TRANSISTOR

IRF

* Low VCE(on) Non Punch Through (NPT) Technology

* Low Diode VF (1.76V Typical @ 25A & 25°C)

* 10 µs Short Circuit Capability

* Square RBSOA

* Ultrasoft Diode Recovery Characteristics

* Positive VCE(on) Temperature Coefficient

* Extended Lead T

IRGP30B120KD-E

IRF

132.39 KB

Insulated gate bipolar transistor.

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IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR IRF

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