Datasheet Details
- Part number
- IRGP30B120KD-E
- Manufacturer
- IRF
- File Size
- 132.39 KB
- Datasheet
- IRGP30B120KD-E_IRF.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRGP30B120KD-E Description
PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
IRGP30B120KD-E Features
* Low VCE(on) Non Punch Through (NPT) Technology
* Low Diode VF (1.76V Typical @ 25A & 25°C)
* 10 µs Short Circuit Capability
* Square RBSOA
* Ultrasoft Diode Recovery Characteristics
* Positive VCE(on) Temperature Coefficient
* Extended Lead T
IRGP30B120KD-E Applications
* Rugged Transient Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Sharing in Parallel Operation
* Longer leads for Easier Mounting
TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ T
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