IRGP30B120KD-E - INSULATED GATE BIPOLAR TRANSISTOR

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IRF

Part number	IRGP30B120KD-E
Manufacturer	IRF
File Size	132.39 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP30B120KD-E Datasheet
Additional preview pages of the IRGP30B120KD-E datasheet.

Low VCE(on) Non Punch Through (NPT) Technology.
Low Diode VF (1.76V Typical @ 25A & 25°C).
10 µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits.
Benchmark Efficiency for Motor Control.

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Published: Aug 23, 2005 |