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IRGP30B120KD-EP - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP30B120KD-EP

Datasheet Details

Part number	IRGP30B120KD-EP
Manufacturer	International Rectifier
File Size	293.69 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP30B120KD-EP Datasheet
Additional preview pages of the IRGP30B120KD-EP datasheet.

Product details

Features

Low VCE(on) Non Punch Through (NPT) Technology.
Low Diode VF (1.76V Typical @ 25A & 25°C).
10 μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package.
Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C Benefits C.
Benchmark Efficiency for Motor Control.

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Published: May 30, 2007 |